AON4421 p-channel enhancement mode field effect transistor general description product summary v ds - 30 v i d (at v gs =-10v) -8 a r ds(on) (at v gs =-10v) < 26m ? r ds(on) (at v gs =-4.5v) < 34m ? esd protected -rohs compliant -halogen free symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r jl 1.6 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics units parameter typ max c/w r ja 42 74 50 v 20 gate-source voltage drain-source voltage -30 the AON4421 uses advanced trench technology to provide excellent r ds(on) with low gate charge. this device is suitable for use as a load switch. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted a i d -8 -6 -60 t a =25c t a =70c power dissipation b p d pulsed drain current c continuous drain current t a =25c w 2.5 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 25 90 30 maximum junction-to-ambient a dfn 3x2 top view bottom view pin 1 g d d d s d d d s g d rev 0: february 2009 www.aosmd.com page 1 of 5
AON4421 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 10 ? ? q g (-10v) 17.6 21 nc q g (-4.5v) 8.6 10 nc q gs 2nc q gd 3.4 nc t d(on) 6ns t r 7ns t d(off) 40 ns t f 30 ns t rr 18 22 ns q rr 32 nc components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-8a, di/dt=500a/ s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =1.9 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =-10v, v ds =-15v, i d =-8a gate source charge gate drain charge total gate charge m ? i s =-1a,v gs =0v v ds =-5v, i d =-8a v gs =-4.5v, i d =-7a forward transconductance diode forward voltage r ds(on) static drain-source on-resistance i dss a v ds =v gs i d =-250 a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-8a reverse transfer capacitance i f =-8a, di/dt=500a/ s v gs =0v, v ds =-15v, f=1mhz switching parameters a . the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. rev 0: february 2009 www.aosmd.com page 2 of 5
AON4421 typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 5 10 15 20 25 30 0.5 1 1.5 2 2.5 3 3.5 4 -v gs (volts) figure 2: transfer characteristics (note e) -i d (a) 10 15 20 25 30 35 048121620 -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics (note e) -i s (a) 25c 125c 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =-4.5v i d =-7a v gs =-10v i d =-8a 10 20 30 40 50 60 70 246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-8a 25c 125c 0 10 20 30 40 50 60 012345 -v ds (volts) fig 1: on-region characteristics (note e) -i d (a) v gs =-2.5v -3v -6v -10v -3.5v -4v -4.5v rev 0: february 2009 www.aosmd.com page 3 of 5
AON4421 typical electrical and thermal characteristic s 0 2 4 6 8 10 0 5 10 15 20 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =-15v i d =-8a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r ja =90c/w 100ms rev 0: february 2009 www.aosmd.com page 4 of 5
AON4421 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds tt t t t t 90% 10% r on d(off) f off d(on) rev 0: february 2009 www.aosmd.com page 5 of 5
|
